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mrf8s21200hr6 MRF8S21200HSR6 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for w--cdma and lte base station applications with frequencies from 2110 to 2170 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1400 ma, p out = 48 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 2110 mhz 17.8 32.6 6.4 --37.7 2140 mhz 18.1 32.6 6.3 --37.1 2170 mhz 18.1 32.9 6.2 --36.2 ? capable of handling 10:1 vswr, @ 32 vdc, 2140 mhz, 250 watts cw output power (3 db input overdrive from rated p out ) features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c cw operation @ t a =25 c derate above 25 c cw 200 1.6 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 76 c, 48 w cw, 28 vdc, i dq = 1400 ma case temperature 81 c, 200 w cw, 28 vdc, i dq = 1400 ma r jc 0.31 0.27 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s21200h rev. 2, 10/2010 freescale semiconductor technical data 2110--2170 mhz, 48 w avg., 28 v w--cdma, lte lateral n--channel rf power mosfets mrf8s21200hr6 MRF8S21200HSR6 case 375d--05, style 1 ni--1230 mrf8s21200hr6 (top view) rf out /v ds figure 1. pin connections rf out /v ds rf in /v gs rf in /v gs 31 42 case 375e--04, style 1 ni--1230s MRF8S21200HSR6 ? freescale semiconductor, inc., 2009--2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf8s21200hr6 MRF8S21200HSR6 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 300 adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v dd =28vdc,i d = 1400 ma, measured in functional test) v gs(q) 2.0 2.7 3.5 vdc drain--source on--voltage (v gs =10vdc,i d =3adc) v ds(on) 0.1 0.17 0.3 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 48 w avg., f = 2140 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 16.5 18.1 19.5 db drain efficiency d 30.0 32.6 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.7 6.3 ? db adjacent channel power ratio acpr ? --37.1 --35.0 dbc input return loss irl ? -- 1 5 -- 7 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out =48wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 17.8 32.6 6.4 --37.7 -- 1 5 2140 mhz 18.1 32.6 6.3 --37.1 -- 1 5 2170 mhz 18.1 32.9 6.2 --36.2 -- 1 3 1. part internally matched both on input and output. (continued)
mrf8s21200hr6 MRF8S21200HSR6 3 rf device data freescale semiconductor table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 2110--2170 mhz bandwidth imd symmetry @ 140 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 8 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 35 ? mhz gain flatness in 60 mhz bandwidth @ p out =48wavg. g f ? 0.4 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.02 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.02 ? db/ c
4 rf device data freescale semiconductor mrf8s21200hr6 MRF8S21200HSR6 figure 2. mrf8s21200hr6(hsr6) t est circuit component layout *c1 and c11 are mounted vertically. r1 c1* r2 r3 r4 c2 c3 c4 c11* c12 c13 c14 c5 c6 c7 c8 c15 c16 c17 c18 c9 c10 r5 mrf8s21200h rev. 2 table 5. mrf8s21200hr6(hsr6) test circ uit component designations and values part description part number manufacturer c1,c4,c5,c11,c12,c13 8.2 pf chip capacitors atc100b8r2ct500xt atc c2 0.2 pf chip capacitor atc100b0r2bt500xt atc c3 0.6 pf chip capacitor atc100b0r6bt500xt atc c6, c7, c14, c15, c16, c17 10 f, 50 v chip capacitors c5750x5r1h106mt tdk c8 0.5 pf chip capacitor atc100b0r5bt500xt atc c9 0.8 pf chip capacitor atc100b0r8bt500xt atc c10 0.3 pf chip capacitor atc100b0r3bt500xt atc c18 470 f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp r1 22 ? , 1/4 w chip resistor crcw120622r0fkea vishay r2, r3 12 ? , 1/4 w chip resistors crcw120612r0fkea vishay r4, r5 0 ? , 3 a chip resistors crcw12060000z0ea vishay pcb 0.030 , r =3.5 ro4350b rogers
mrf8s21200hr6 MRF8S21200HSR6 5 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 2060 irl g ps acpr f, frequency (mhz) figure 3. output peak--to--average ratio compression (parc) broadband performance @ p out = 48 watts avg. 17 19 -- 3 8 34 32 31 --36.4 d , drain efficiency (%) g ps , power gain (db) 18.8 18.6 18.4 2080 2100 2120 2140 2160 2180 2200 2220 -- 3 4 -- 1 7 parc parc (db) acpr (dbc) 17.8 17.4 -- 8 v dd =28vdc,p out =48w(avg.),i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf 17.2 17.6 18.2 18 --37.2 --35.6 --34.8 30 33 --15.2 --13.4 -- 11 . 6 -- 9 . 8 -- 2 . 5 0 -- 2 -- 1 . 5 -- 1 -- 0 . 5 figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l v dd =28vdc,p out = 140 w (pep), i dq = 1400 ma two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz figure 5. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 20 40 120 18 48 43 38 33 28 23 d , drain efficiency (%) -- 1 d b = 4 2 w 80 d acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 19 g ps , power gain (db) 18.5 18 17.5 17 16.5 16 -- 2 d b = 5 7 w -- 3 d b = 7 6 w 60 acpr -- 1 0 100 g ps parc im7--l im7--u v dd =28vdc,i dq = 1400 ma, f = 2140 mhz, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf d
6 rf device data freescale semiconductor mrf8s21200hr6 MRF8S21200HSR6 typical characteristics 1 acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 10 22 0 60 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 10 100 10 -- 6 0 acpr (dbc) 20 18 0 -- 2 0 figure 7. broadband frequency response 3 21 1750 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 12 9 1850 gain (db) 18 gain 1950 2050 2150 2350 2550 irl -- 1 8 0 -- 3 -- 6 -- 9 -- 1 2 irl (db) -- 1 5 16 14 12 -- 5 0 -- 4 0 -- 3 0 6 15 g ps v dd =28vdc,i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf 2140 mhz 2450 2250 2170 mhz f = 2110 mhz 2140 mhz 2170 mhz 2110 mhz 2140 mhz 2170 mhz 2110 mhz 300 w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 8. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 9. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
mrf8s21200hr6 MRF8S21200HSR6 7 rf device data freescale semiconductor v dd =28vdc,i dq = 1400 ma, p out =48wavg. f mhz z source ? z load ? 2060 3.64 -- j4.51 1.42 -- j2.27 2080 3.65 -- j4.50 1.41 -- j2.21 2100 3.64 -- j4.53 1.40 -- j2.15 2120 3.56 -- j4.47 1.40 -- j2.09 2140 3.58 -- j4.44 1.39 -- j2.03 2160 3.58 -- j4.44 1.38 -- j1.97 2180 3.57 -- j4.44 1.38 -- j1.91 2200 3.56 -- j4.45 1.38 -- j1.86 2220 3.54 -- j4.64 1.37 -- j1.80 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 10. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor mrf8s21200hr6 MRF8S21200HSR6 alternative peak tune load pull characteristics 36 p in , input power (dbm) v dd =28vdc,i dq = 1400 ma, pulsed cw, 10 sec(on), 10% duty cycle 57 55 53 37 58 56 50 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 54 59 61 35 33 41 32 31 60 52 51 30 ideal actual 34 38 39 40 f = 2110 mhz f = 2170 mhz f = 2140 mhz f = 2170 mhz f = 2110 mhz f = 2140 mhz f (mhz) p1db p3db watts dbm watts dbm 2110 231 53.6 276 54.4 2140 230 53.6 279 54.5 2170 229 53.6 277 54.4 test impedances per compression level f (mhz) z source ? z load ? 2110 p1db 2.14 -- j5.14 0.77 -- j1.44 2140 p1db 3.28 -- j6.37 0.75 -- j1.52 2170 p1db 5.59 -- j7.20 0.67 -- j1.41 figure 11. pulsed cw output power versus input power @ 28 v
mrf8s21200hr6 MRF8S21200HSR6 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor mrf8s21200hr6 MRF8S21200HSR6
mrf8s21200hr6 MRF8S21200HSR6 11 rf device data freescale semiconductor
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mrf8s21200hr6 MRF8S21200HSR6 13 rf device data freescale semiconductor product documentation and software refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 oct. 2009 ? initial release of data sheet 1 nov. 2009 ? removed typical p out @ 1 db compression point bullet from p. 1, and p1db from the typical performance table, p. 3. p1db was artificially low due to fixture t uning tradeoffs, i.e., fixture was tuned for back--off linearity versus optimum p1db. 2 oct. 2010 ? changed human body model esd rating from class 1a to class 2 to reflect recent esd test results of the device, p. 2.
14 rf device data freescale semiconductor mrf8s21200hr6 MRF8S21200HSR6 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009--2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8s21200h rev. 2, 10/2010

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